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Alem Abraha Teklu was born in 1962 in Asmara, Eritrea. He graduated from the University of Asmara with B. Sc. in physics with an honor of great distinction in 1985 and was immediately hired by the Department of Physics in the University of Asmara as an assistant graduate, assisting undergraduate physics laboratories and teaching freshman physics courses. He earned his M. Sc. from Addis Ababa University in 1988 specializing on the theory of superconductivity and the study of electron pairing mechanisms. He then went back to the University of Asmara and worked there as a Lecturer for about four years and joined the Department of Physics and Astronomy at Louisiana State University (LSU) in the spring of 1993. He did his Ph. D. work on the study of heavy fermion materials using the de-Haas van Alphen effect at very low temperatures and high magnetic fields under the direction of Prof. R. Goodrich of LSU and graduated with a Ph. D. in May of 2000. Following his degree, he became a post doctoral research associate at NCPA in the University of Mississippi at Oxford working on Resonant Ultrasound Spectroscopy (RUS) at low temperatures and high magnetic fields. Dr. Teklu is currently at the College of Charleston where he continues to work with RUS measuring room temperature properties of thermoelectric and superconducting materials.

Selected publications:

R. G. Goodrich, N. Harrison, A. Teklu, D. Young, and Z. Fisk, "Development of the High-Field Heavy-Fermion Ground State in Cex La1-x B6 Intermetallics", Phys. Rev. Lett.,.82, pp 3669-72, 1999.

R. G. Goodrich, N. Harrison, J. J. Vuillemin, A. Teklu, D. W. Hall, Z. Fisk, D. Young, and J. Sarrao, "Fermi Surface of ferromagnetic EuB6 ", Phys. Rev. B 58, pp 14896-902, 1998.

A. A. Teklu, R. G. Goodrich, N. Harrison, D. Hall, D. Young, and Z. Fisk, "Fermi Surface Properties of Low Concentration Cex La1-x B6 Alloys: dHvA Experiment" (to be published in Phys. Rev. B)

N. Harrison, L. Balicas, A. Teklu, R. G. Goodrich, J. S. Brooks, J. L. Smith, and J. Cooley, "Mixed Valence of U Determined Using the de Haas-van Alphen Effect: Application to Ux Th1-x Be13 " (to be published in Phys. Rev. Lett.)